Basic Info.
Color
Gray
Main Content
96%Aln, 97%Aln
Main Characteristics
High Thermal Conductivity,Excellent Plasma Resista
Main Applications
Heat Dissipating Parts,Plasma Resistance Parts
Bulk Density
3.30
Vickers Hardness(Load 500g)
10.0
Compressive Strength
2500
Young’ Modulus of Elasticity
320
Poisson’s Ratio
0.24
Specific Heat
0.74
Volume Resistivity
>=10-14
Dielectric Strength
>=15
Loss Tangent
5 *10-4
Transport Package
Carton Packing
Specification
Customized
Trademark
INNOVACERA
Origin
Fujian, China
Product Description
6inch 8inch 6" 8" Polished or Lapped Sides AlN Aluminum Nitride Wafer Substrates for Semiconductors Manufacturing
Aluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates,offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.
Aluminum Nitride Features Include:
>High Thermal Conductivity
>High Electrical Insulation
>Low Dielectric Constant
>Mechanical Strength and Stability
>Corrosion Resistance
Chemical and Thermal Stability
>High Thermal Conductivity
>High Electrical Insulation
>Low Dielectric Constant
>Mechanical Strength and Stability
>Corrosion Resistance
Chemical and Thermal Stability
The unique properties of Aluminum Nitride Wafer Substrates make them highly sought after in various semiconductor applications.
The substrates are particularly valued in:>Power Electronics
>RF and Microwave Devices
>LED Manufacturing
>Wafer Bonding Technology
Aluminum Nitride Wafer Substrates are indispensable in the modern semiconductor industry, offering a combination of thermal conductivity, electrical insulation, and mechanical strength that few materials can match. Innovacera's range of Aluminum Nitride (AIN) wafers, available in various sizes and customized options, provide the reliability and performance necessary for high-demand applications. As the semiconductor industry continues to advance, the role of AIN substrates will only become more critical, ensuring that devices remain efficient, durable, and capable of meeting the ever-growing demands of technology.
| Aluminium Nitride Material Properties | ||||
| Material | ALN | |||
| Item No. | INC-AN180 | INC-AN200 | INC-AN220 | |
| Color | Gray | Gray | Beige | |
| Main Content | 96%ALN | 96%ALN | 97%ALN | |
| Main Characteristics | High Thermal Conductivity,Excellent Plasma Resistance | |||
| Main Applications | Heat Dissipating Parts,Plasma Resistance Parts | |||
| Bulk Density | 3.30 | 3.30 | 3.28 | |
| Water Absorption | 0 | 0 | 0 | |
| Vickers Hardness(Load 500g) | 10.0 | 9.5 | 9. | |
| Flexural Strength | >=350 | >=325 | >=280 | |
| Compressive Strength | 2500 | 2500 | - | |
| Young' Modulus of Elasticity | 320 | 320 | 320 | |
| Poisson's Ratio | 0.24 | 0.24 | 0.24 | |
| Fracture Toughness | - | - | - | |
| Coefficient Linear Thermal Expansion | 40-400degree | 4.8 | 4.6 | 4.5 |
| Thermal Conductivity | 20degree | 180 | 200 | 220 |
| Specific Heat | 0.74 | 0.74 | 0.76 | |
| Thermal Shocking Resistance | - | - | - | |
| Volume Resistivity | 20degree | >=10-14 | >=10-14 | >=10-13 |
| Dielectric Strength | >=15 | >=15 | >=15 | |
| Dielectric Constant | 1MHz | 9 | 8.8 | 8.6 |
| Loss Tangent | *10-4 | 5 | 5 | 6 |
